Direct observation of interface and nanoscale compositional modulation in ternary III- As heterostructure nanowires

نویسندگان

  • Sriram Venkatesan
  • Morten H. Madsen
  • Herbert Schmid
  • Peter Krogstrup
  • Erik Johnson
  • Christina Scheu
چکیده

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Direct correlation between structural and optical properties of III-V nitride nanowire heterostructures with nanoscale resolution.

Direct correlation of structural and optical properties on the nanoscale is essential for rational synthesis of nanomaterials with predefined structure and functionality. We study optical properties of single III-V nitride nanowire radial heterostructures with measured spatial resolution of <20 nm using cathodoluminescence (CL) technique coupled with scanning transmission electron microscopy (S...

متن کامل

Suppression of planar defects in the molecular beam epitaxy of GaAs/ErAs/GaAs heterostructures

Related Articles Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors J. Appl. Phys. 112, 054513 (2012) Modulation doping to control the high-density electron gas at a polar/non-polar oxide interface Appl. Phys. Lett. 101, 111604 (2012) Ultra low-resistance palladium silicide Ohmic contacts to lightly doped n-InGaAs J. Appl. Phys. 112, 054510 (...

متن کامل

Miniature all-solid-state heterostructure nanowire Li-ion batteries as a tool for engineering and structural diagnostics of nanoscale electrochemical processes.

Complex interfacial phenomena and phase transformations that govern the operation of Li-ion batteries require detailed nanoscale 3D structural and compositional characterization that can be directly related to their capacity and electrical transport properties. For this purpose, we have designed model miniature all solid-state radial heterostructure Li-ion batteries composed of LiCoO2 cathode, ...

متن کامل

Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer fro...

متن کامل

Representation of a nanoscale heterostructure dual material gate JL-FET with NDR characteristics

In this paper, we propose a new heterostructure dual material gate junctionless field-effect transistor (H-DMG-JLFET), with negative differential resistance (NDR) characteristic. The drain and channel material are silicon and source material is germanium. The gate electrode near the source is larger. A dual gate material technique is used to achieve upward band bending in order to access n-i-p-...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2013